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4 - Effects

4.8 - Interaction between gas and semiconductors

Thick-film semiconductor material
The sensing material in this gas sensor is metal oxide, most typically SnO2. When a metal oxide crystal such as SnO2 is heated at a certain high temperature in air, oxygen is adsorbed on the crystal surface with a negative charge. Then donor electrons in the crystal surface are transferred to the adsorbed oxygen, resulting in leaving positive charges in a space charge layer. Thus, surface potential is formed to serve as a potential barrier against electron flow. Inside the sensor, electric current flows through the conjunction parts (grain boundary) of SnO2 micro crystals. At grain boundaries, adsorbed oxygen forms a potential barrier which prevents carriers from moving freely. The electrical resistance of the sensor is attributed to this potential barrier. In the presence of a deoxidizing gas, the surface density of the negatively charged oxygen decreases, so the barrier height in the grain boundary is reduced. The reduced barrier height decreases sensor resistance.
Thin-film semiconductor material
The principle or operation of this sensor is similar to the thick-film version. The adsorbed oxygen ions generate a depletion layer in the thin-film which results the increase of the resistance. In the presence of a deoxidizing gas, the surface density of the negatively charged oxygen decreases, thus decreasing the depletion layer and the resistance of the sensing material.



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